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Memory

Memory, which is commonly referred to as RAM (Random Access Memory), is a temporary (Volatile) storage area utilized by the CPU.
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AQD-D3L2GN16-SQ1
MEMORY MODULE, 2G DDR3-1600 256X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$19.00

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AQD-D3L4GN16-SG1
MEMORY MODULE, 4G DDR3-1600 512X8 1.35V & 1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$27.00

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AQD-D3L8GN16-SG1
MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$52.00

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AQD-D4U16N24-SE
MEMORY MODULE, 16G DDR4-2400 1GX8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$99.00

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AQD-D4U4GN24-SG
MEMORY MODULE, 4G DDR4-2400 512X8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$29.00

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AQD-D4U8GN24-SE
MEMORY MODULE, 8G DDR4-2400 1GX8 1.2V SAM
  1. DDR4-2400 Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.2V power consumption
  4. Samsung original chip

US$51.00

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AQD-SD3L2GN16-SQ1
MEMORY MODULE, 2G SO-DDR3-1600 256X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$21.00

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AQD-SD3L4GN16-SG1
MEMORY MODULE, 4G SO-DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$27.00

Comparar Mas
AQD-SD3L8GN16-SG1
MEMORY MODULE, 8G SO-DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

US$51.00

Comparar Mas
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